Defect absorption and optical transitions in hydrogenated amorphous silicon |
| |
| Authors: | Jasmin J Thevaril Stephen K O’Leary |
| |
| Institution: | 1. Department of Electrical and Computer Engineering, University of Windsor, 401 Sunset Avenue, Windsor, Ontario, Canada N9B 3P4;2. School of Engineering, The University of British Columbia - Okanagan, 3333 University Way, Kelowna, British Columbia, Canada V1V 1V7;1. Information Display Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-769, South Korea;2. National Center for Nanoprocess and Equipment, Korea Institute of Industrial Technology, 6 Cheomdangwagi-ro 208beon-gil, Buk-gu, Gwangju 500-480, South Korea;3. Department of Electronic, Seoil University, Jungnang-gu, Seoul 131-702, South Korea;1. Graduate School of Education, Okayama University, 3-1-1 Tsushima-Naka, Kita-ku, Okayama 700-8530, Japan;2. Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, 6-3 Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan;3. J-PARC Center, JAEA, Tokai, Ibaraki 319-1195, Japan;1. Department of Physics, Faculty of Science, Damietta University, Egypt;2. Department of Physics, Faculty of Science, Helwan University, Cairo, Egypt |
| |
| Abstract: | Using an empirical model for the density of states functions associated with hydrogenated amorphous silicon, with defect states taken into account, we examine how the distributions of such states shape the optical response of this material. The contributions to this response attributable to the various types of optical transitions are also determined. Finally, we demonstrate that we are able to capture the spectral dependence of the optical absorption coefficient associated with a defect absorption influenced sample of hydrogenated amorphous silicon using our empirical formalism for the density of states functions associated with this material. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
