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Interband optical transitions of an InAs/InGaAs dots-in-a-well structure
Authors:Rui Chen  HY Liu  HD Sun
Institution:1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore;2. Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, United Kingdom;1. Laboratoire LPR, Département de Physique, Faculté des Sciences, Université Badji Mokhtar, Annaba, Algeria;2. Laboratoire de Physique et d?électronique (LPE), Faculté des Sciences, Université, Libanaise, El Hadath, Beirut, Lebanon;3. Laboratoire de Physique Quantique et Modélisation Mathématique de la Matière (LPQ3M), Université de Mascara, 29000 Mascara, Algeria;1. Hefei National Laboratory for Physical Sciences at Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026, PR China;2. Centre of Physical Experiments, University of Science and Technology of China, Hefei, Anhui 230026, PR China;3. Hefei National Laboratory for Physical Sciences at Microscale and Physics Department, University of Science and Technology of China, Hefei, Anhui 230026, PR China;4. School of Physics and Material Science, Anhui University, Hefei, Anhui 230601, PR China;1. Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;2. School of Automation, Nanjing Institute of Technology, Nanjing 211167, China;3. School of Physics, Ludong University, Yantai 264025, China
Abstract:
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