拉曼光谱表征石墨烯材料的研究进展

石墨烯独特的二元化电子价键结构使其在纳米电子器件中具有良好的应用发展前景。拉曼光谱作为一种灵敏、便捷的技术，已被成功地用作表征石墨烯的结构和特性。本综述着重对沉积在不同基底以及掺杂的石墨烯拉曼光谱研究做了一个简单的总结。通过对铟锡氧化物、蓝宝石和玻璃基底上的石墨烯拉曼光谱进行观察，发现在不同基底上的石墨烯拉曼G峰与2D峰峰值会有不同程度的偏移，但2D峰峰值可判断石墨烯层数这一结论仍适用。掺杂可改变石墨烯的荷电状态，使石墨烯表现出空穴（p）型或电子（n）型掺杂特性，通过石墨烯拉曼光谱的变化可以定性石墨烯的掺杂类别并定量表征石墨烯的载流子浓度。

Research progress of Raman spectroscopy characterization of graphene materials

Graphene have good prospect in the application of nano-electronic devices for its unique normalize electronic valence bond structure. Raman spectroscopy as a sensitive and convenient technology, has been used for characterization of the structure and properties of graphene successfully. This review focuses on doing a simple summary in Raman spectroscopy research of graphene on two aspects of deposited on different substrates and doping. Although the G peak and 2D peak of Raman spectroscopy in different substrates has deviation in different degree, by observing Raman spectroscopy of indium tin oxide, sapphire, and glass substrate graphene, the conclusion that 2D peak can determine the layer of graphene still applied. Doping can change the charged state of graphene which makes graphene show the hole type (p) or electronic (n) doped features. The doping category of graphene is described qualitatively and quantitatively with carrier concentration of graphene by observing the change of graphene Raman spectroscopy.