LaSrGaO4 substrate for epitaxial high-Tc superconducting thin films

We have shown lanthanum strontium gallate (LaSrGaO₄) has considerable potential as a substrate material for high-temperature superconducting thin films. We report on the growth and physical properties of LaSrGaO₄ crystal. Single crystals of LaSrGaO₄ have been grown by the Czochralski technique with diameter 32 mm and lengths of 110 mm. We found that this crystal had no structural phase transitions and was twin-free. We show that high-quality epitaxial Y-Ba-Cu-O films can be grown on LaSrGaO₄.