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Thermal hysteresis and memory effects in TlGaSe2 crystal with incommensurate phase
Authors:F A Mikailov  E ?entürk  L Tümbek  T G Mammadov  T S Mammadov
Institution:1. Department of Physics , Gebze Institute of Technology , Gebze, 41400 Kocaeli, Turkey;2. Institute of Physics , Azerbaijan Academy of Sciences , 370143 Baku, Azerbaijan faik@gyte.edu.tr;4. Department of Physics , Sakarya University , 54100 Sakarya, Turkey;5. Department of Physics , Gebze Institute of Technology , Gebze, 41400 Kocaeli, Turkey;6. Institute of Physics , Azerbaijan Academy of Sciences , 370143 Baku, Azerbaijan;7. Department of Physics , Gazi University , 06500 Teknikokullar, Ankara, Turkey
Abstract:Temperature dependencies of dielectric permittivity of TlGaSe2 have been measured under various thermal cycles. Peculiarities of anomalies in temperature dependencies of dielectric permittivity corresponding to structural phase transitions at 108 and 115?K are discussed. The coexistence of two different incommensurate structures in TlGaSe2 was proposed. The phase transitions at 108 and 115?K are considered as commensurate lock-in transitions. As a result a new model of the structural phase transitions in TlGaSe2 has been suggested.
Keywords:Ferroelectrics  Dielectric constant  Phase transition
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