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Pressure induced phase transitions in Ga1??? x In x P |
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| Authors: | Anurag Srivastava RK Singh |
| Institution: | 1. Satellite Venture Business Laboratory , Shizuoka University, Johoku 3-5-1 , Hamamatsu, Shizuoka, 432-8011, Japan;2. Computational Physics Group , School of Pure and Applied Physics, Guru Ghasidas University , Bilaspur (C.G.) 495 009, India |
| Abstract: | We have theoretically investigated the effect of pressure on the structural stability of GaP?:?InP mixed system. The three-body-potential (TBP) model has been used. The TBP model consists of long-range as well as short-range interactions; the long-range part includes the modified Coulomb force as well as a three-body term; the short-range part in TBP defines the van der Waals and overlap repulsive interactions. We observe a pressure-induced structural phase transformation from ZnS (B3) to NaCl (B1) type phase in Ga 1?x In x P. Our calculated transition pressures for the initial GaP and final InP compound semiconductors are in good agreement with other reported data. |
| Keywords: | Phase transition Three-body potential GaP?:?InP High pressure Compound semiconductors |