Low-temperature growth of high-Tc superconducting films by plasma-enhanced metal-organic chemical vapor deposition |
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| Authors: | Keiichi Kanehori Nobuyuki Sugii Shin'Ichiro Saito |
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| Affiliation: | Central Research Laboratory , Hitachi, Ltd. , Kokubunji, Tokyo, 185, Japan |
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| Abstract: | Plasma-enhanced MOCVD in which metal-organic compounds are sublimated directly into the growth chamber is studied for the first time as a new low-temperature process for growing superconducting YBa2Cu3O--x thin films. Y(THD)3, Ba(THD)2, Cu(THD)2 and oxygen are used as metal sources and oxydizing agent. Emission spectroscopy reveals that activated metal-organic compounds and activated oxygen species are present during film growth. Superconducting YBa2Cu3O7-x films whose zero-resistivity temperature are 50 K and 82 K are grown at 550°C and 600°C. |
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| Keywords: | Oxide superconductor YBa2Cu3O x MOCVD plasma thin film |
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