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Order-disorder transition on Si(001) |
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| Authors: | Yoshitada Murata Masakazu Kubota |
| Institution: | 1. The University of Tokyo, Institute for Solid State Physics , 7-22-1 Roppongi, Minato-ku, Tokyo, 106, Japan;2. Department of Electronics , The Polytechnic University , 4-1-1 Hashimoto-dai, Sagamihara, Kanagawa, 229, Japan |
| Abstract: | A phase transition between c(4x2) and 2x1 structures on the Si(001) surface has been observed at 200 K by low-energy electron diffraction. This transition is a second order order-disorder transition of the asymmetric dimer configuration. The streak pattern remains up to well above the transition temperature. The temperature dependence of the width and the length of the streak can be described in terms of the effects of a strong anisotropic coupling between adjacent asymmetric dimers. |
| Keywords: | Order-disorder silicon surface |