Magnetic Impurity Band and Photoinduced Magnetic Phase Transition in Diluted Magnetic Semiconductors |
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Authors: | Masao Takahashi |
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Affiliation: | Kanagawa Institute of Technology , 1030 Shimo-Ogino, Atsugi-shi , 243-0292 , Japan |
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Abstract: | Applying the dynamical coherent potential approximation (dynamical CPA) to a model of diluted magnetic semiconductors (DMSs), in which both random impurity distribution and thermal fluctuation of localized spins are taken into account, the spin-polarized band and the carrier spin polarization are calculated for various magnetizations. In order to clarify the role of impurity depth on the occurrence of ferromagnetism, three typical cases are investigated: (a) II-VI DMS, (b) deep impurity level, and (c) strong exchange interaction. The present study reveals that the impurity depth of magnetic ions strongly enhances the carrier spin polarization (CSP) and accordingly, leads to a high Curie temperature. This means that photoinduced ferromagnetism with high Curie temperature can be expected in a DMS with a deep impurity depth and strong exchange interaction. |
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Keywords: | Carrier-induced Ferromagnetism Magnetic Semiconductors Exchange Interaction Magnetic Impurity Band (Ga,Mn)As (In,Mn)As |
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