| Preparation of p—n Junction Diode by B—Doped Diamond Film Grown on Si—Doped c—BN |
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| 引用本文： | 王成新,高春晓,等.Preparation of p—n Junction Diode by B—Doped Diamond Film Grown on Si—Doped c—BN[J].中国物理快报,2002,19(10):1513-1515. |
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| 作者姓名： | 王成新 高春晓 |
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| 作者单位： | [1]StateKeyLaboratoryforSuperhardMaterials,JilinUniversity,Changchun130023 [2]Towhomcorrespondenceshouldbeaddressed,JilinUniversity,Changchun130023 |
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| 摘 要： | A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially on a silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot filament chemical vapour deposition method.The ohmic electrode of Ti(50nm)/Mo(100nm)/Au(300nm)for the p-type diamond film and the bulk crystal of the c-BN were deposited by the rf planar magnetron method.Then the device was annealed at 410℃ in air for 1h in order to form ohmic metal alloy,The current-voltage characteristics of the heterojunction diode were measured and the result indicated that the rectification ratio reached 10^5,and the turn-on voltage and the highest current were 7V and 0.36mA,respectively.
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| 关 键 词： | 金刚石薄膜 p－n结二极管 制备 |
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