An Air‐Stable Semiconducting Polymer Containing Dithieno[3,2‐b:2′,3′‐d]arsole |
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| Authors: | Joshua P. Green Dr. Yang Han Rebecca Kilmurray Prof. Martyn A. McLachlan Prof. Thomas D. Anthopoulos Prof. Martin Heeney |
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| Affiliation: | 1. Department of Chemistry and Centre for Plastic Electronics, Imperial College London, London, UK;2. Department of Physics and Centre for Plastic Electronics, Imperial College London, UK;3. Department of Materials and Centre for Plastic Electronics, Imperial College London, UK |
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| Abstract: | Arsole‐containing conjugated polymers are a practically unexplored class of materials despite the high interest in their phosphole analogues. Herein we report the synthesis of the first dithieno[3,2‐b;2′,3′‐d]arsole derivative, and demonstrate that it is stable to ambient oxidation in its +3 oxidation state. A soluble copolymer is obtained by a palladium‐catalyzed Stille polymerization and demonstrated to be a p‐type semiconductor with promising hole mobility, which was evaluated by field‐effect transistor measurements. |
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| Keywords: | arsenic conjugated polymers field-effect transistors molecular electronics semiconductors |
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