High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator |
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Authors: | A M Nadtochiy W Hofmann T D Germann S A Blokhin L Ya Karachinskiy M V Maximov V A Shchukin A E Zhukov D Bimberg |
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Institution: | 1220. St. Petersburg Academic University, Nanotechnology Research and Education Center, Russian Academy of Sciences, St. Petersburg, 195220, Russia 2220. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia 3220. Institut für Festk?rperphysik, Technische Universitat Berlin, Berlin, 10623, Germany 5220. Connector Optics OOO, St. Petersburg, 194292, Russia 4220. VI Systems GmbH, Berlin, 10623, Germany
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Abstract: | The high-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator are studied using small-signal modulation analysis of the electroreflectance. The experimental data obtained are approximated using the suggested equivalent electrical circuit, which accounts for the formation of a nonequilibrium space charge in the carrier-depletion region of the modulator. The bandwidth of the high-frequency electrical-signal transfer to the electro-optical region, determined for the suggested equivalent electrical circuit of the modulator, is shown to be 3GHz. |
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