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Correlation of charge trapping and electroluminescence in highly efficient Si-based light emitters
Authors:T. Gebel   L. Rebohle   J. Sun   W. Skorupa   A. N. Nazarov  I. Osiyuk
Affiliation:a Forschungszentrum Rossendorf, Bautzner Landstrasse 128, P.O. Box 510119, 01314, Dresden, Germany;b Nanoparc GmbH, Dresden-Rossendorf, Germany;c Vienna Technical University, Vienna, Austria;d Institute of Semiconductor Physics, NASU, Kiev, Ukraine
Abstract:In this paper we report on recent results on charge trapping and electroluminescence (EL) from Ge rich SiO2 layers. Thermally grown 80 nm thick SiO2 layers were implanted with Ge ions at energies of 30–50 keV to peak concentrations of 1–6 at%. Subsequently rapid thermal annealing was performed at 1000°C for 6, 30 and 150 s under a nitrogen atmosphere in order to form luminescence centers. A combination of capacitance–voltage (CV) and current–voltage (IV) methods was used for the investigation of the trapping properties. It was found that at electric fields <8 MV/cm electron trapping dominates while at higher electric fields which are typically required for the EL operation of the devices positive charge trapping occurs. It is assumed, that the trapping sites which are responsible for the trapping of the positive charge are in strong relation to the defects causing the luminescence.
Keywords:Nanocluster rich oxides   Ion implantation   Electroluminescence   Charge trapping
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