| 硅化物阻挡层对高压漏扩展MOS晶体管的影响 |
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| 引用本文： | 王磊,高超,刘博,胡剑,黎坡,巨晓华,张美丽,李文军,杨华岳.硅化物阻挡层对高压漏扩展MOS晶体管的影响[J].半导体学报,2009,30(3):034003-4. |
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| 作者姓名： | 王磊 高超 刘博 胡剑 黎坡 巨晓华 张美丽 李文军 杨华岳 |
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| 作者单位： | Shanghai;Institute;Microsystem;Information;Technology;Chinese;Academy;Sciences;Graduate;University;Grace;Semiconductor;Manufacturing;Corporation; |
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| 摘 要： | Silicide-block-film effects on drain-extended MOS （DEMOS） transistors were comparatively investigated, by means of different film stack stoichiometric SiO2 and silicon-rich oxide （SRO）. The electrical properties of the as-deposited films were evaluated by extracting source/drain series resistance. It was found that the block film plays a role like a field plate, which has significant influence on the electric field beneath. Similar to hot-carrier- injection （HCI） induced degradation for devices, the block film initially charged in fabrication process also strongly affects the device characteristics and limits the safe operating area.
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| 关 键 词： | MOS晶体管 硅化物 沉积膜 高电压 热载流子注入 安全工作区 二氧化硅 串联电阻 |
| 收稿时间： | 8/18/2008 2:33:19 PM |
Silicide-block-film effects on high voltage drain-extended MOS transistors |
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| Wang Lei,Gao Chao,Liu Bo,Hu Jian,Lee Po,Ju Xiaohu,Zhang Meili,Li Wenjun and Yang Steve.Silicide-block-film effects on high voltage drain-extended MOS transistors[J].Chinese Journal of Semiconductors,2009,30(3):034003-4. |
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| Authors: | Wang Lei Gao Chao Liu Bo Hu Jian Lee Po Ju Xiaohu Zhang Meili Li Wenjun and Yang Steve |
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| Institution: | Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China; Grace Semiconductor Manufacturing Corporation, Shanghai 201203;Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China; Grace Semiconductor Manufacturing Corporation, Shanghai 201203;Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China;Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China;Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China;Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China;Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China;Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China;Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China |
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| Abstract: | Silicide-block-film effects on drain-extended MOS (DEMOS) transistors were comparatively investi-gated, by means of different film stack stoichiometric SiO2and silicon-rich oxide (SRO). The electrical properties of the as-deposited films were evaluated by extracting source/drain series resistance. It was found that the block film plays a role like a field plate, which has significant influence on the electric field beneath. Similar to hot-carrier-injection (HCI) induced degradation for devices, the block film initially charged in fabrication process also strongly affects the device characteristics and limits the safe operating area. |
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| Keywords: | DEMOS silicide-block-film field plate |
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