Power dissipation characteristics of great power and super high speed semiconductor switch

The power dissipation characteristics of pulsed power switchreversely switched dynistors (RSDs) are investigated in this paper.According to the expressions of voltage on RSD, derived from theplasma bipolar drift model and the RLC circuit equations of RSD mainloop, the simulation waveforms of current and voltage on RSD areacquired through iterative calculation by using the fourth orderRunge--Kutta method, then the curve of transient power on RSD versustime is obtained. The result shows that the total dissipation on RSDis trivial compared with the pulse discharge energy and thecommutation dissipation can be nearly ignored compared with thequasi-static dissipation. These characteristics can make therepetitive frequency of RSD increase largely. The experimentalresults prove the validity of simulation calculations. The influencefactors on power dissipation are discussed. The power dissipationincreases with the increase of the peak current and the n-base widthand with the decrease of n-base doping concentration. In order tokeep a low power dissipation, it is suggested that the n-base widthshould be smaller than 320$mu $m when doping concentration is1.0$times $10$^{14}$cm$^{ - 3}$ while the doping concentrationshould be higher than 5.8$times $10$^{13}$cm$^{ - 3}$ when n-basewidth is 270$mu $m.