Surface‐State‐Mediated Charge‐Transfer Dynamics in CdTe/CdSe Core–Shell Quantum Dots |
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Authors: | Sachin Rawalekar Sreejith Kaniyankandy Sandeep Verma Dr. Hirendra N. Ghosh |
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Affiliation: | Radiation and Photochemistry Division, Bhabha Atomic Research Centre, Mumbai‐400085 (India), Fax: (+91)?22‐2550‐5151 |
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Abstract: | Herein, we report the synthesis of aqueous CdTe/CdSe type‐II core–shell quantum dots (QDs) in which 3‐mercaptopropionic acid is used as the capping agent. The CdTe QDs and CdTe/CdSe core–shell QDs are characterized by X‐ray diffraction (XRD), high‐resolution transmission electron microscopy (HR‐TEM), steady‐state absorption, and emission spectroscopy. A red shift in the steady‐state absorption and emission bands is observed with increasing CdSe shell thickness over CdTe QDs. The XRD pattern indicates that the peaks are shifted to higher angles after growth of the CdSe shell on the CdTe QDs. HR‐TEM images of both CdTe and CdTe/CdSe QDs indicate that the particles are spherical, with a good shape homogeneity, and that the particle size increases by about 2 nm after shell formation. In the time‐resolved emission studies, we observe that the average emission lifetime (τav) increases to 23.5 ns for CdTe/CdSe (for the thickest shell) as compared to CdTe QDs (τav=12 ns). The twofold increment in the average emission lifetime indicates an efficient charge separation in type‐II CdTe/CdSe core–shell QDs. Transient absorption studies suggest that both the carrier cooling and the charge‐transfer dynamics are affected by the presence of traps in the CdTe QDs and CdTe/CdSe core–shell QDs. Carrier quenching experiments indicate that hole traps strongly affect the carrier cooling dynamics in CdTe/CdSe core–shell QDs. |
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Keywords: | charge transfer core– shell structures quantum dots surface states time‐resolved spectroscopy |
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