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Ultrasonic detection of the pinning of dislocations by point defects in lead—II. Model for dislocation defect interaction
Authors:N.B. Meisner  D.S. Woo  H.B. Huntington  G.L. Salinger  L.V. Meisel
Affiliation:Physics Department, Rensselaer Polytechnic Institute, Troy, N.Y. 12181, U.S.A.;Benet Laboratory, Watervliet Arsenal, Watervliet, N.Y. 12189, U.S.A.
Abstract:Experiments are presented to establish that irradiation produced defects in lead not only pin dislocations but also can be trapped at the ends of dislocation lines in agreement with the model proposed by Thompson, Buck, Huntington and Barnes. This model indicates that there is a temperature T* at which there is a maximum pinning of dislocations. T* is found to be near 140 K. The data of Part I are analyzed according to this model using reasonable values of the dislocation density and the binding energy of the defect in the trap. The resulting activation energy for the region A process in the reaction kinetics model is found to be 0.15 eV which is consistent with the value found from an eigenvalue expansion model.
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