Scattering mechanisms in p-type GaSb in the temperature range 30–300°K

In a former paper[1], we have shown that the magnetoresistance coefficient in p-type GaSb (1+ξ) remains close to 1 at 77°K and that the mobilities ratio remains equal to 6 in the temperature range 77–300°K.We show from these results that between 30 and 300°K, the predominant scattering is a mixed scattering by lattice vibrations and ionized impurities. Interband scattering is the predominant process for light holes, while heavy holes undergo intraband scattering. In this temperature range, this mechanism accounts for the mobility variation, a result which had not been found so far on p-type GaSb.