Highly reliable bipolar resistive switching in sol-gel derived lanthanum-doped PbTiO3 thin film: Coupling with ferroelectricity? |
| |
作者姓名: | Ying Wang Wei-Jin Chen Xiao-Yue Zhang Wen-Jing Ma Biao Wang Yue Zheng |
| |
作者单位: | [1]State Key Laboratory of Optoelectronic Materialsand Technologies, School of Physics and Engineering,Sun Yat-sen University, 510275 Guangzhou, China; [2]Micro & Nano Physics and Mechanics Research Laboratory,School of Physics and Engineering,Sun Yat-sen University, 510275 Guangzhou, China |
| |
基金项目: | supported by the National Natural Science Foundation of China(51172291,11232015,and 11302267);the Fundamental Research Funds for the Central Universities,NCET in University;Research Fund for the Doctoral Program of Higher Education;Fok Ying Tung Foundation;Science and Technology Innovation Project of Guangdong Provincial Education Department;Guangdong Natural Science Funds for Distinguished Young Scholar |
| |
摘 要: | Nanoscale PbxLa1-,Ti1-x/4O3 (PLT) thin film has been fabricated on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD) method. Ferroelectricity of the fresh-made PLT thin film has been clearly detected through piezoelectric force microscopy (PFM) by writing reversible ferroelectric domains. However, PLT thin film also shows off-standard ferroelectric hysteresis loops highly dependent on frequency, indicating large amount of mobile space charges in the film. Subsequent current-voltage (C-V) studies show that sandwich-like Pt/PLT/Pt structure exhibits notable bipolar resistive switching (BRS) characteristics with high stability (〉 103 switching cycles). It is found that the C-V curves of both high- and low-resistance states have the feature of space-charge-limited current (SCLC) conduction, indicating important roles of defects in the conduction. X-ray photoelectron spectroscopy measurement further verifies that oxygen vacancies based conductive filament mechanism is likely responsible for the observed RS effect. Our demonstration of stable RS effect in the PLT thin film and its possible coupling with ferroelectricity is promising in device development and applications, such as development of ferroelectric-tunable RS memories.
|
关 键 词: | Ferroelectricity · Resistive switching · Stability · Oxygen vacancy |
本文献已被 CNKI 维普 SpringerLink 等数据库收录! |
|