Electron energy distribution at the insulator-semiconductorinterface in AC thin film electroluminescent display devices |
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Authors: | Aguilera A. Singh V.P. Morton D.C. |
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Affiliation: | Dept. of Electr. Eng., Texas Univ., El Paso, TX ; |
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Abstract: | Electron emission from insulator-semiconductor interface in ZnS:Mn ac thin film electroluminescent (ACTFEL) display devices was investigated by studying the current and field waveforms. A new technique for measuring the interface electron energy distribution at insulator-semiconductor interfaces was developed. The technique involves the measurement of tunnel current transients and can be used to study the interface electron energy distribution between any insulator-semiconductor pair with which an ac thin film test structure can be fabricated. It was applied to a ZnS:Mn display device at two temperatures of 10 K and 300 K and to a metal interface device structure |
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