Effect of interdiffusion on band structure and intersubband absorption coefficient of GaAs/GaAlAs double quantum well

The influence of Ga and Al atoms interdiffusion on the band structure and absorption coefficient of coupled double quantum wells are investigated on the basis of a potential composed of four modified Wood–Saxon potentials. Wave functions of the real potential are expressed as a superposition of the stationary state wave functions of the “basal” potential. It is shown that interdiffusion leads to the smearing of the rectangular profile of the potential and to the disappearance of the barrier between the wells, as a result of which, the degradation of doublet character of the electron energetic spectrum is observed. It is also shown that interdiffusion leads to the significant change in oscillator strength and in the enhancement of the thermal stability of the absorption spectrum of the considered heterostructure.