Fabrication of coaxial p-Cu2O/n-ZnO nanowire photodiodes |
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| Authors: | H.T. Hsueh S.J. Chang F.Y. Hung W.Y. Weng C.L. Hsu T.J. Hsueh T.Y. Tsai B.T. Dai |
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| Affiliation: | 1. Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan;2. Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan;3. Department of Electrical Engineering, National University of Tainan, Tainan 700, Taiwan;4. National Nano Devices Laboratories, Tainan 741, Taiwan |
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| Abstract: | The authors report the deposition of Cu2O onto vertically well aligned ZnO nanowires by DC sputtering. The average length, average diameter and density of these VLS-synthesized ZnO nanowires were 1 μm, 100 nm and 23 wires/μm2, respectively. With proper sputtering parameters, the deposited Cu2O could fill the gaps between the ZnO nanowires with good step coverage to form coaxial p-Cu2O/n-ZnO nanowires with a rectifying current–voltage characteristic. Furthermore, the fabricated coaxial p-Cu2O/n-ZnO nanowire photodiodes exhibit reasonably large photocurrent-to-dark-current contrast ratio and the fast responses. |
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| Keywords: | Cu2O ZnO nanowire p-Cu2O/n-ZnO |
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