Complexometric determination of copper and iron in silicon with a cupric ion-selective electrode

A method is described for the complexometric determination of copper(II) and iron(III) in silicon with the cupric ion-selective electrode as endpoint detector. The sample is dissolved with hydrogen fluoride, hydrogen peroxide, and gold(III) as catalyst. The silicon matrix is then removed distilling off the azeotropic mixture containing hydrofluorosilicic acid. The residue is dissolved with 0.5 M sulfuric acid and the resulting solution divided into two parts. Copper is determined over the first by TETREN at pH 5.0–6.0. The copper-iron sum is determined over the second part, by EDTA at pH 1.0–1.5. The effect of Al(III), Mn(II), and Zn(II) ions is investigated. Applications of the method of the determination of copper and iron in silicon samples from different manufacturers, is illustrated. Copper at level of 10 ppm was analyzed with a relative standard deviation of 6%. Iron at level of 5000 ppm was analyzed with a relative standard deviation of about 2.5%.