Influence of annealing on the spatial distribution of thermoelectric properties in bismuth-telluride specimens |
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Authors: | K Satou O Yamashita H Odahara S Tomiyoshi |
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Institution: | (1) Faculty of Engineering, Ehime University, Bunkyocho, Matsuyama 790-8577,, Japan |
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Abstract: | A p-type (Bi0.25Sb0.75)2Te3 specimen doped with 8 wt. % excess Te alone and an n-type Bi2(Te0.94Se0.06)3 specimen codoped with 0.017 wt. % Te and 0.068 wt. % I were grown by the Bridgeman method and were cut into a parallelepiped of 5×5×15 mm3, where the length of 15 mm is parallel to the freezing direction. Their local Seebeck coefficient αℓ and local electrical resistivity ϱℓ were measured before and after annealing at a scan step of 1 mm along the freezing direction of the specimen, where annealing was done at 673 K for 2 h in vacuum. The specimen was mounted on an X–Y stage and the temperature difference between two probes set at an interval of 1 mm apart was approximately 2.6 K and measured with an accuracy of 0.1 K. The ϱℓ of the as-grown and annealed specimens changed more significantly from place to place than their αℓ, so that the effect of annealing on the local power factor Pℓ (=αℓ
2/ϱℓ) was not uniform throughout the specimen surface. Such a spatial variation in Pℓ is considered to result mainly from the spatial variation in ϱℓ which originates from only a slight deviation of the melt composition from the stoichiometry inside a specimen, and also from a difference in the degree of alignment of the c planes of grains inside a specimen. The maximum Pℓ (=αℓ
2/ϱℓ) of the annealed p- and n-type specimens reached surprisingly high values of 7.78 and 8.93 mW/K2 m, respectively, which correspond to being about twice as large as the macroscopic P values obtained by conventional methods. PACS 72.15.Jf; 84.60.Rb; 85.30.De |
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