| Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method |
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| 引用本文： | 岑展鸿 徐骏 刘艳松 韩培高 李伟 黄信凡 陈坤基. Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method[J]. 中国物理快报, 2006, 23(4): 1029-1031 |
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| 作者姓名： | 岑展鸿 徐骏 刘艳松 韩培高 李伟 黄信凡 陈坤基 |
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| 作者单位： | National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 50472066, 60425414, and 90301009, and the National Key Basic Research and Development Programme of China under Grant No 2001CB610503. |
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| 摘 要： |
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| 关 键 词： | 单一层 发光微晶硅结构 厚度 晶体学 纳米晶粒 |
| 收稿时间： | 2006-01-09 |
| 修稿时间： | 2006-01-09 |
Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method |
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| CEN Zhan-Hong, XU Jun, LIU Yan-Song, HAN Pei-Gao, LI Wei, HUANG Xin-Fan, CHEN Kun-Ji. Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method[J]. Chinese Physics Letters, 2006, 23(4): 1029-1031 |
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| Authors: | CEN Zhan-Hong XU Jun LIU Yan-Song HAN Pei-Gao LI Wei HUANG Xin-Fan CHEN Kun-Ji |
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| Abstract: | KrF excimer laser annealing on ultrathin hydrogenated amorphous Si films with various initial Si thicknesses is carried out to obtain a single layer of nanocrystalline Si structures. It is found that Si nanograins can be obtained with the area density as high as 10^11 cm^-2 under the irradiation with suitable laser fluence. Raman and planar transmission electron microscopy are used to characterize the formation process of Si nanocrystals from amorphous phase. Moreover, a strong photoluminescence is observed at room temperature from well-relaxed nanocrystalline Si structures. |
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