Microstructuring of p-Si(1 0 0) by localized electrochemical polishing using patterned agarose as a stamp |
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| Institution: | 1. School of Chemistry and Chemical Engineering, Southeast University, Jiangning District, Nanjing, Jiangsu Province, 211189, PR China;2. National Tissue Engineering Center of China, No.68, East Jiang Chuan Road, Shanghai, 200241, PR China;3. School of Chemical Engineering, East China University of Science and Technology, No.130, Mei Long Road, Shanghai, 200237, PR China;1. Department of Mechanical and Industrial Engineering, University of Brescia, Via Branze 38, 25123 Brescia, Italy;2. Bioengineering Research Group, Nanotechnology and Advanced Materials Department, Materials and Energy Research Center (MERC), P.O. Box 14155-4777, Tehran, Iran;1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206, China;2. China University of Petroleum, Beijing 102249, China;3. Chongqing Materials Research Institute, Chongqing 400707, China |
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| Abstract: | Localization of electrochemical polishing using patterned agarose has been employed to fabricate microstructures on p-Si(1 0 0). The patterns were first transferred from a master to an agarose stamp, and then the microstructures were fabricated by limiting electrochemical polishing in the small contact area between the stamp and the workpiece. The gel stamp acts as the current flow channel between the working electrode and the counter electrode, simultaneously directing the electrolyte to the preferential parts of the Si workpiece. Microstructures fabricated by partial anodic dissolution on p-Si are approximately the same as those on the master. Lateral deviation of the fabricated microstructures from those on the master is approximately 2.6% and the electrochemical etching rate in HF is around several micrometers in an hour. This newly developed technique can be used as a low-cost and simple approach to fabricate microstructures on p-Si with high fidelity at a fast rate. |
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