The enhancement of photoluminescence of n-type porous silicon by Hall-effect assistance during electrochemical anodization |
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| Affiliation: | 1. Department of Electronics Engineering, St. John’s University, 499, Section 4, Tam King Road, Tamsui, Taipei 25135, Taiwan, ROC;2. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, ROC;3. Institute of Material Science and manufacturing, Chinese Culture University, Taipei 11114, Taiwan, ROC;1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and Biomedical Material and Engineering Center, Wuhan University of Technology, Wuhan 430070, China;2. Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education and State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410000, China;3. School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221000, China;1. Geological Institute, Russian Academy of Sciences, Moscow, Russia;2. Institute of Physics of the Earth, Russian Academy of Sciences, Moscow, Russia;3. Department of Geological Sciences, University of Florida, Gainesville, FL, USA;4. Institute of Geology, Ufa Scientific Center, Russian Academy of Sciences, Ufa, 450000 Russia;1. School of Engineering and Futures Industries Institute, University of South Australia, Mawson Lakes, SA 5095, Australia;2. School of Mechanical and Manufacturing Engineering, University of New South Wales, Sydney, NSW 2052, Australia;3. Department of Mechanical Engineering, Benha Faculty of Engineering, Benha University, Egypt;4. Faculty of Aerospace Engineering, Shenyang Aerospace University, China;5. Department of Energy Application Engineering, Far East University, Tainan City 744, Taiwan;6. Centre for Advanced Composite Materials, Department of Mechanical Engineering, University of Auckland, New Zealand;7. School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia;1. Department of Medicinal Chemistry, Key Laboratory of Chemical Biology (Ministry of Education), School of Pharmaceutical Sciences, Shandong University, Jinan, 250012, PR China;2. School of Pharmacy, Xinxiang Medical University, Xinxiang, 453003, PR China |
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| Abstract: | In this study, n-type porous silicon (n-PS) films with high-aspect-ratio Si-tips are formed with the assistance of Hall-effect during the electrochemical anodization. Lorentz force sweeps down the majority carriers (electrons) in n-type Si to enhance the anodization etching. Surface layers are inverted from n-type to p-type, so sufficient holes can continuously appear on the surface to participate in chemical reaction during the etching process. Illumination is not necessary in this process, so the problem of illumination-depth limitation is solved. The etching current, morphology, and photoluminescence of the n-PS prepared in this way are investigated. Strong visible photoluminescence emissions at room temperature are demonstrated on n-PS. |
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