Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary |
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Authors: | Zhou Yu-Ming He Yi-Gang Lu Ai-Xia and Wan Qing |
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Institution: | College of Physics and Microelectronic, Hunan University, Changsha 410082, China; College of Electrical and Information Engineering, Hunan University, Changsha 410082, China |
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Abstract: | The grain boundaries (GBs) have a strong effect on the electric
properties of ZnO thin film transistors (TFTs). A novel grain
boundary model was developed to analyse the effect. The model was
characterized with different angles between the orientation of the
grain boundary and the channel direction. The potential barriers
formed by the grain boundaries increase with the increase of the grain
boundary angle, so the degradation of the transistor characteristics
increases. When a grain boundary is close to the drain edge, the
potential barrier height reduces, so the electric properties were
improved. |
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Keywords: | simulation ZnO thin film
transistor grain boundary |
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