Electric field gradients at 151Eu sites in GaN

The electric field gradients at Eu sites in GaN have been investigated in conversion electron Mössbauer spectroscopy (CEMS) in which ¹⁵¹Eu probe ions were implanted into an undoped GaN layer grown on a sapphire substrate. The sample was implanted with 120 keV ¹⁵¹Eu ions to a fluence of 1 × 10¹⁵, and annealed at 1,200 K. CEMS spectra of the ¹⁵¹Eu 21.6 keV transition were collected, of the GaN sample as well as of a Si sample implanted with overlapping profiles of ¹⁵¹Eu and O. The GaN spectra were fitted with two symmetric doublets, D1 and D2, with isomer shifts and quadrupole splittings of δ?=??0.27 mm/s (relative to Eu₂O₃), ΔE _Q?= 0.85 (3) mm/s; and δ?=?? 0.22 mm/s, ΔE _Q?= 2.90 (5) mm/s, respectively. D1 is attributed to Eu at substitutional Ga lattice sites; D2 to Eu at or near substitutional sites but with extensive lattice damage. The splittings of D1 and D2 correspond to quadrupole coupling frequency of 15 (2) and 50 (4) MHz, consistent with measurements of ⁶⁹Ga, ⁷¹Ga and ¹¹¹In in GaN.