Optoelectronic properties of zinc blende
ZnSSe and ZnBeTe alloys |
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Authors: | S?Abdi-Ben Nasrallah S?Ben Afia Email author" target="_blank">H?BelmabroukEmail author M?Said |
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Institution: | (1) Unité de Recherche de Physique des Solides, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir, Tunisia |
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Abstract: | The compositional dependence of the electronic band structure has been
computed for zinc blende ZnSxSe1-x and Zn1-xBexTe alloys
with composition x ranging from 0 to 1. The empirical pseudo potential
method with the virtual crystal approximation have been used. A particlar
attention has been paid to the effect of alloy disorder on the electronic
properties of the II-VI studied compounds. For this purpose, the
compositional disorder is added to the virtual crystal approximation as an
effective potential. Such correction approximates significantly our
calculated values of the band gap bowing parameters to experimental ones.
The ZnSxSe1-x gap energy shows a nonlinear behavior with strong
bowing for low compositions of sulfur. The Zn1-xBexTe compound, as
it is known, can be direct or indirect semiconductor depending on its
beryllium composition x. The electron effective mass and the refractive
index have been investigated as well. Polynomial approximations are obtained
for both the energy gap and the effective mass as functions of alloy
composition at and X valleys. |
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