Neutron activation analysis of the process of metal gettering in silicon slices |
| |
| Authors: | M J J Theunissen H J J Jaspers J M G Hanssen M L Verheijke |
| |
| Institution: | (1) Philips Research Laboratoires, P.O. Box 8000, 5600 JA Eindhoven, (The Netherlands) |
| |
| Abstract: | Neutron activation analysis is used to study the process of Cu gettering in a silicon wafer in which differently doped and disordered regions are present. The results show a strong preference of the copper atoms to be concentrated in the n+(p+) and in the n+ regions. The effectivity of the gettering process can be increased by thermal growth of the defects present in the boron implanted layers. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
