| LP—MOCVD研制InGaAs/InP应变量子阱LD |
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| 引用本文： | 刘宝林.LP—MOCVD研制InGaAs/InP应变量子阱LD[J].光子学报,1996,25(5):434-438. |
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| 作者姓名： | 刘宝林 |
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| 作者单位： | 厦门大学物理系，吉林大学电子工程系 |
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| 摘 要： | 本文指出在LP-MOCVD生长过程中,采用量子阱有源区和上限制层不同的生长温度以及生长非掺杂过渡层等技术能有效地控制InGaAs/InP量子阱激光器的p-n结结位,给出了采用DEZn和H2S做掺杂源在InP材料中p型和n型杂质溶度和p-n结控制的条件,并研制出有源区阱层InGaAs与InP存在0.5%压缩应变量子阱激光器,这一结构LD实现室温脉冲激射,得到峰值功率为106mW以上,阈值电流密度为2.6kA/cm2.
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| 关 键 词： | LP—MOCVD 应变 量子阱 激光器 |
| 收稿时间： | 1995-03-14 |
InGaAs/InP STRAINED QUANTUM WELL LD BY LP-MOCVD |
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| Liu Baolin.InGaAs/InP STRAINED QUANTUM WELL LD BY LP-MOCVD[J].Acta Photonica Sinica,1996,25(5):434-438. |
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| Authors: | Liu Baolin |
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| Institution: | 1. Physics Department Xiamen University, Xiamen 361005;3. Electronic Engineering Department of Jilin University, Changchun 130023 |
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| Abstract: | The using of differential growth temperature of InGaAs/InPQuantum Well(QW)area andInP upper confining layer,and growth of unintentionally doped InP layer were proposed to controlp-n junction position by Low-Pressure Metal Organic Chemical Vapor Deposition(LP-MOCVD).Thep-type and n-type doping source were DEZn and H2S.InGaAs/InP three strained layer QW’s LD wasfabricated.The LD was pulsed lased at room temperature.The pulsed output peak power is greaterthan 106mW,and the pulsed threshold current density is 2.6kA/cm2。 |
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| Keywords: | Strain Quantum Well LD LP-MOCVD |
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