Realization of optoelectronic integrated transmitter and receiver for POF Applications |
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Authors: | Xiang Cheng Xiao-feng Shi Cheng-cheng Fan Huang-ping Yan Ji-fang Li Chao Chen |
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Affiliation: | 1. School of Physics and Mechanical & Electrical Engineering, Xiamen University, Xiamen 361005, China;2. School of Energy Research, Xiamen University, Xiamen 361005, China |
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Abstract: | The optoelectronic integrated transmitter and receiver for 650 nm plastic optical fiber (POF) communication applications realized in 0.5 μm BCD (Biplor, CMOS and DMOS) process is first described in this paper. The 650 nm resonant cavity light emitting diode (RCLED) is used as light source. It is first proposed for optoelectronic integration of the transmitter by bonding RCLED to the driver chip. Temperature compensation technology is employed in the driver circuit to compensate for the modulation current. In the monolithic optoelectronic integrated receiver, large area multi-finger PIN photodetector (PD) that is compatible with standard IC process, transimpedance amplifier and post amplifier are presented. Measurement results show that the responsivity and capacitance of PD is 0.25 A/W and 5 pF, respectively. The sensitivity of receiver is −14.6 dBm at 180 Mb/s and BER is less than 10−9 for 650 nm input light by POF. A clear eye diagram is demonstrated for 180 Mb/s PRBS. These indicate that optoelectronic integrated chips can be employed in high-speed POF-based Fast Ethernet systems for broadband access network applications. |
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Keywords: | Plastic optical fiber communication (POF communication) Optoelectronic integrated circuit (OEIC) Optical transmitter Optical receiver |
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