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Influence of the structure parameters on the gain and noise figure in silicon parametric amplifiers based on SOI Rib waveguides
Authors:Xiangwei Shen  Jinhui Yuan  Xinzhu Sang  Chongxiu Yu  Zhongchao Wu  Xiaoliang He  Lan Rao  Min Xia  Wenzhi Liu
Affiliation:1. 26th Institute of China Electronics Technology Corporation, 400060 Chongqing, China;2. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, 100876 Beijing, China
Abstract:Gain and Noise figure (NF) characteristics in dual-pump parametric amplifier based on silicon on insulator (SOI) Rib waveguides are numerically investigated in the presence of nonlinear losses. The impact of structure parameters of the silicon optical parametric amplifiers (SOPAs) on the gain and the NF are also analyzed. The results show that both the height and the width of the silicon on insulator (SOI) can affect the gain and the NF of SOPAs. 354 nm bandwidth (3 dB) and 8.135 maximum gain can be achieved by tailoring the structure parameters of the SOI rib waveguides. Moreover, the dispersion and the effective mode area of SOI are also analyzed.
Keywords:Noise figure (NF)   Silicon on insulator (SOI)   Silicon optical parametric amplifiers (SOPAs)
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