Enhanced grain growth and improved optical properties of the Sn doped thin films of Sb2S3 orthorhombic phase |
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Authors: | Bushra Ismail Saima Mushtaq Rafaqat Ali Khan Asad Muhammad Khan Aurang Zeb Abdur Rahman Khan |
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Affiliation: | 1. Department of Chemistry, COMSATS Institute of Information Technology, Abbottabad 22060, Pakistan;2. Department of Applied Physics, Federal Urdu University of Arts, Science and Technology, Islamabad 44000, Pakistan;3. Nanoscience and Catalysis Division, National Centre for Physics, Quaid-e-Azam University Campus, Islamabad 44000, Pakistan;4. Department of General Studies, Jubail University College, Jubail, KSA |
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Abstract: | The applications of newer Sb2S3 material as a suitable absorber material for the solar cells have been effected by the toxicity of Sb. The present study is an effort to synthesize lower Sb contents Sn doped Sb2S3 materials by retaining or improving the morphological and optical properties. SnCl2 and SbCl3 are used respectively as Sn and Sb sources, while Na2S2O3 has been used as a source of S in chemical bath deposition method. Bath temperature was maintained at 10 °C and the deposition time was 4 h and the annealing of the films in vacuum was done for 2 h at 250 °C. X-ray diffraction, Rutherford backscattering spectroscopy, scanning electron microscopy and ultraviolet/visible light spectroscopy have been used for the study of structural, morphological and the optical properties. The chemical composition determined from RBS is Sn0.11Sb2S3. Phase analysis confirms the orthorhombic Sb2S3 phase with b and c axis as the preferred ones for the impurity Sn atoms. Grain growth at lower deposition temperature is enhanced on the account of doping. Nanosized spherical particles are seen in the optical micrographs. Annealing lowers the band gap, the values being 1.50 and 1.31 eV for the unannealed and the annealed samples respectively. |
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Keywords: | Chalcogenides Solar cells Absorption coefficient X-ray diffraction Electrical conductivity |
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