| MO-CVD法和Ⅱ-Ⅵ族材料的制备 |
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| 引用本文： | 范广涵,胡光.MO-CVD法和Ⅱ-Ⅵ族材料的制备[J].发光学报,1983,4(4):77-89. |
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| 作者姓名： | 范广涵 胡光 |
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| 作者单位： | 中国科学院长春物理研究所 |
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| 摘 要： | 本文评述了金属有机化合物化学汽相淀积(MO-CVD)法的原理、特点及应用。着重讨论了Ⅱ-Ⅵ族材料的MO-CVD法的制备。
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| 收稿时间： | 1983-05-24 |
MO-CVD AND THE PREPARATION OF II-VI COMPOUNDS |
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| Fan Guang-han,Hu Guang.MO-CVD AND THE PREPARATION OF II-VI COMPOUNDS[J].Chinese Journal of Luminescence,1983,4(4):77-89. |
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| Authors: | Fan Guang-han Hu Guang |
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| Institution: | Changchun Institute of Physics, Academia Sinica |
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| Abstract: | MO-CVD is a chemical vapor deposition method using organometallic compounds as starting materials. It has showed the unique advantages for the preparation of materials at high purity and thin layer and has been extensively used. There fore,much attention has been paid to the MO-CVD method recently.In this paper,the principle,features and applications of organometallic compounds chemical vapor deposition(MO-CVD)have been reviewed and the preparation of II-VI compounds by MO-CVD method has been specially disscused. |
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