Photoacoustic spectroscopy of surface defects states of semiconductor samples

This paper presents both theoretical and experimental issues connected with measurements and numerical analysis of the microphone amplitude and phase photoacoustic spectra of semiconductor samples exhibiting surface absorption connected with defects states located on their surfaces. The analytical model of surface absorption in semiconductors is described and the results of computations are compared with experimental amplitude and phase spectra for Zn_0.965Be_0.035Se crystal samples. This paper shows the importance of the phase spectra for the proper interpretation of the PA (photoacoustic) results.