| 量子阱半导体激光器阈值的理论分析 |
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| 引用本文： | 杜宝勋. 量子阱半导体激光器阈值的理论分析[J]. 发光学报, 2000, 21(3): 179-281 |
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| 作者姓名： | 杜宝勋 |
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| 作者单位： | 高功率半导体激光国家重点实验室, 吉林长春130022 |
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| 基金项目： | 国家重点实验室基金试点项目!( 98BQ0 3 0 1) |
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| 摘 要： | 分析了单量子阱(SQW)、多量子阱(MQW)和分别限制异质结构量子阱(SCH-SQW)半导体激光器的阈值.求出了表示光增益随注入载流子密度变化的方程.利用这个结果,得到了上述三种量子阱半导体激光器的阈值电流密度的表达式.
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| 关 键 词： | 量子阱 半导体激光器 阈值 |
| 收稿时间： | 2000-05-25 |
| 修稿时间： | 2000-05-25 |
Theoretical Analysis on Threshold of QW Semiconductor Lasers |
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| DU Bao-xun. Theoretical Analysis on Threshold of QW Semiconductor Lasers[J]. Chinese Journal of Luminescence, 2000, 21(3): 179-281 |
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| Authors: | DU Bao-xun |
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| Affiliation: | National Key Laboratory of High Power Semiconductor Lasers, Changchun 130021, China |
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| Abstract: | Although the threshold of quantum well semiconductor lasers has been studied by various theoretical analysis,all of the results were not the simple analysis equation but some numerical value curves.In order to obtain the analysis equation,we do a farther study.In this paper,the threshold of single quantum well(SQW),multi quantum well(MQW) and separate confinement hereostructure quantum well(SCH SQW)semiconductor lasers were analyzed.The equation for the optical gain as a function of the injected carrier density at various temperatures for undoped quantum well were derived.Using this result,the expressions for the threshold current density of the three quantum well semiconductor lasers were obtained. |
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| Keywords: | quantum well semiconductor lasers threshold |
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