首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Stationary solutions to an energy model for semiconductor devices where the equations are defined on different domains
Authors:Annegret Glitzky  Rolf Hünlich
Abstract:We discuss a stationary energy model from semiconductor modelling. We accept the more realistic assumption that the continuity equations for electrons and holes have to be considered only in a subdomain Ω0 of the domain of definition Ω of the energy balance equation and of the Poisson equation. Here Ω0 corresponds to the region of semiconducting material, Ω \ Ω0 represents passive layers. Metals serving as contacts are modelled by Dirichlet boundary conditions. We prove a local existence and uniqueness result for the two‐dimensional stationary energy model. For this purpose we derive a W1,p ‐regularity result for solutions of systems of elliptic equations with different regions of definition and use the Implicit Function Theorem. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Keywords:Energy models  mass  charge and energy transport in heterostructures  strongly coupled elliptic systems  mixed boundary conditions  Implicit Function Theorem  existence  uniqueness  regularity
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号