Effect of the anticrossing of excitonic states on their phase relaxation time in a GaAs/AlGaAs symmetric double quantum well |
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| Authors: | K L Litvinenko V G Lysenko |
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| Institution: | (1) Institute of the Technology of Microelectronics and Ultrapure Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia |
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| Abstract: | The change in the properties of excitonic states near anticrossing is investigated experimentally. It is shown that the phase
relaxation time of light excitons in a GaAs/AlGaAs symmetric double quantum well increases by a factor of five as a result
of mixing of the energy states of light and heavy excitons.
Pis’ma Zh. éksp. Teor. Fiz. 69, No. 6, 426–430 (25 March 1999) |
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