Understanding nitrogen-induced effects on the performance of ultra low-k dielectric systems through ab initio simulations |
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Authors: | Ling Dai Shuo-Wang Yang Xian-Tong Chen |
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Institution: | a Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore S117576, Singapore b Institute of High Performance Computing, Singapore S117528, Singapore c Institute of Microelectronics, Singapore S117685, Singapore |
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Abstract: | Large scale ab initio molecular dynamics simulations were performed to investigate how Cu/ultra low-k systems are improved when N is incorporated into the pore-sealing layers. It was found that the high affinity of N to Ta and H gives rise to new phases that prevent H atoms from penetrating the Ta diffusion barrier layer. Consequently, the Ta layer forms organized structures with good barrier performance and electrical conductivity. Furthermore, a continuous ductile film is formed to seal the highly porous polymer dielectrics. Interfacial adhesion between the pore-sealing layer and the dielectrics is also enhanced by inter-diffusion. |
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Keywords: | Low-k ab initio Interface Diffusion barrier Pore-sealing Nitrogen |
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