Temperature dependent quantum well state on Cu(1 1 0)(2 × 1) striped surface studied by angle resolved photoelectron spectroscopy

We have investigated the temperature dependence of angle resolved photoelectron spectroscopy for the lateral quantum well states (QWS) on the striped Cu(1 1 0)(2 × 1)O surface. For the striped surface with oxygen coverage of 0.25 ML, we have successfully observed two discrete levels along a perpendicular direction to the stripes in the surface Brillouin zone, which is generated by quantization of the Shockley surface state. We have found that the relative photoelectron intensity of the two discrete levels depends on the temperature. The photoelectron intensity tends to concentrate on the ground level of the QWS with decreasing temperature. Our investigation indicates that the electron population of each quantum well level depends on the temperature.