Metastable precursor for oxygen dissociation on Si(0 0 1) 2 × 1 resolved by high lateral resolution work function measurements |
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Authors: | JM Sturm Bene Poelsema |
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Institution: | Solid State Physics, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands |
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Abstract: | The development of contact potential difference (CPD) inhomogeneities on oxide-covered silicon samples was investigated by monitoring the CPD of a clean Si(0 0 1) 2 × 1 surface during exposure to molecular oxygen with Kelvin Probe Force Microscopy. A steady fluctuation level is reached within the completion of a monolayer of oxide. Non-continuous oxygen exposure at room temperature and at lower temperatures unequivocally demonstrates the coexistence of two oxidation processes. One of these processes involves a metastable precursor to oxygen dissociation. |
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Keywords: | Silicon Oxygen Kelvin probe force microscopy Atomic force microscopy Scanning probe techniques Work function measurements |
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