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PASSIVATION OF THE InP(100) SURFACE USING (NH4)2Sx |
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| Authors: | CHEN WEI-DE XIE KAN DUAN LI-HONG XIE XIAO-LONG CUI YU-DE |
| Abstract: | InP(100) surface treated with (NH4)2Sx has been investigated by using photolumines-cence(PL), Auger electron spectroscopy and X-ray photoelectron spectroscopy, It is found that PL intensity increased by a factor of 3.3 after (NH4)2Sx passivation and the sulfur remained on the surface only bonded to indium, not to phosphorus. This suggests that the sulfur atoms replace the phosphorus atoms on the surface and occupy the phosphorus vacancies. |
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