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Electron transport in semiconductors under a strong high frequency electric field
Authors:W Cai  P Hu  T F Zheng and B Yudanin

M Lax

Institution:

Department of Physics, City College of the City University of New York, New York, New York 10031, U.S.A.

a Department of Physics and the Graduate Center of the City University of New York, New York, New York 10031, USA

b AT&T Bell Laboratories, Murray Hill, New Jersey 07974, U.S.A.

Abstract:We propose an analytical approach to study the electron transport in semiconductors when a strong high frequency (HF) electric field is applied together with a weak direct current (DC) electric field. We derive a set of dynamic equations, from which the amplitude and phase of each harmonic component of the electron drift velocity and the electron temperature can be obtained. Our calculation shows that the DC conductivity in an n-GaAs sample decreases dramatically with increase of the first and second harmonic applied electric fields and definitely becomes negative.
Keywords:Nonlinear high frequency conductivity  high harmonic components
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