Diffusion of Al in ion-implanted Pd and Pt |
| |
Authors: | R. Lappalainen A. Anttila |
| |
Affiliation: | (1) Department of Physics, University of Helsinki, SF-00170 Helsinki 17, Finland |
| |
Abstract: | The diffusion coefficients of aluminium have been measured in polycrystalline fcc Pd and Pt. The Al-implanted palladium and platinum samples were annealed at 400°–800 °C and 450°–900 °C, respectively. The aluminium profiles were probed using the nuclear resonance broadening (NRB) technique. Values of (1.41±0.09) and (1.38±0.09) eV for the activation energy and (1.5–1.0+5)×10–6 and (4–3+10)×10–7cm2/s for the frequency factor were obtained for Al in Pd and Pt, respectively. These anomalous results, compared to the normal impurity diffusion, were checked using also Al-evaporated samples. |
| |
Keywords: | 66.30.Jt 61.70.Tm |
本文献已被 SpringerLink 等数据库收录! |
|