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Electrical properties and valence band structure of GeSexTe1−x single crystals |
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| Authors: | Y. R. Ge H. Wiedemeier |
| Abstract: | The anomalous composition dependence of the carrier transport properties of Ge1?y(Se0.2Te0.8)y in the range y=0.495 ? 0.510 has been analyzed at room temperature by means of a two-carrier model. The close agreement between the experimental and computational results confirms the existence of two valence bands in α-GeSexTe1?x which are produced by the rhombohedral distortion of the lattice at low temperature. |
| Keywords: | Germanium selenide telluride mixed single crystals valence band structure |