Far-infrared frequency shifting by optically induced gratings in semiconductors |
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| Affiliation: | 1. Graduate Institute of Automation Technology, National Taipei University of Technology, 1, Sec. 3, Zhongxiao E. Rd., Taipei 10608, Taiwan;2. Department of Electro-optical Engineering, National Taipei University of Technology, 1, Sec. 3, Zhongxiao E. Rd., Taipei 10608, Taiwan;3. Institute of Solid State Physics, University of Latvia, 8 Kengaraga str., LV-1063 Riga, Latvia LV-1063 Riga, Latvia;4. Department of Engineering Science and Ocean Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Rd., Taipei 10617, Taiwan;5. Department of Chemistry, National Central University, 300, Zhongda Rd., Zhongli District, Taoyuan City 320317, Taiwan |
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| Abstract: | A first approach to frequency shifting of far-infrared radiation by optically induced “moving” refractive index gratings in semiconductors is reported. The factors determining the performance of this frequency shifting technique are inferred using a one-dimensional analytical model. In a proof-of-principle experiment frequency shifting of 119 μm radiation was observed up to 80 MHz using a 300 mW, 488 nm Ar+ laser for optical excitation. |
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