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Infrared emission of free carriers in semiconductors below the fundamental absorption edge
Affiliation:1. Department of Chemistry, The Pennsylvania State University, University Park, PA 16802, USA;2. Intercollege Materials Science and Engineering Program, The Pennsylvania State University, University Park, PA 16802, USA;3. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA;1. Photophysics Laboratory, Department of Physics, Centre of Advanced Study, DSB Campus, Kumaun University, Nainital 263002, Uttarakhand, India;2. Physics Department, Lajpat Rai College, Sahibabad, Ghaziabad 201005, U.P, India;3. Laser-Spectroscopy Laboratory, Department of Applied Physics, Delhi Technological University, Delhi 110042, India;1. Department of Bioorganic Chemistry, Institute of Chemistry and Food Technology, Faculty of Engineering and Economics, Wrocław University of Economics, 118/120 Komandorska, 53-345 Wroclaw, Poland;2. Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 1410, 50-950, Wroclaw 2, Poland;1. School of Environmental and Materials Engineering, College of Engineering, Shanghai Polytechnic University, Shanghai 201209, China;2. Shanghai Innovation Institute for Materials, Shanghai 200444, China;3. Department of Materials Science and Engineering, Drexel University, Philadelphia, PA 19104, United States;4. School of Biomedical Engineering, Science, and Health Systems, Drexel University, Philadelphia, PA 19104, United States;1. Institute of Future Lighting, Academy for Engineering and Technology, Fudan University, Shanghai 200433, China;2. Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China;3. Institute for Preservation of Chinese Ancient Books, Fudan University Library, Fudan University, Shanghai 200433, China;4. Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, Zhejiang 322000, China;5. Zhongshan - Fudan Joint Innovation Center, Zhongshan 528437, China;1. Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, UK;2. Department of Materials and Centre for Processable Electronics, Imperial College London, London W12 0BZ, UK;3. Department of Physics and Centre for Processable Electronics, Imperial College London, London SW7 2AZ, UK;4. SPECIFIC IKC, College of Engineering, Swansea University, Swansea SA2 7AX, UK;5. School of Engineering and Materials Science, Queen Mary University of London, London E1 4NS, UK
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