Si related defects in GaAs |
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| Institution: | 1. UNSW, Sydney, Australia;2. Geological Survey of Canada, Sidney, Canada;1. Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China;2. Center on Nano-Energy Research, School of Physical Science & Technology, Guangxi University, Nanning 530004, China;3. Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan;4. Department of Physics, University of North Florida, Jacksonville, FL 32224, USA;5. Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;6. National Synchrotron Radiation Research Center, Hsinchu 300-76, Taiwan |
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| Abstract: | High-resolution localized vibrational mode (LVM) spectroscopy of light impurities proved to be a powerful tool providing identification of the impurity, information on its lattice location and estimate of its concentration. Spitzer et al.(1) and Newman et al.(2) studied for years especially Si in GaAs, not only for its technological importance, but also for its amphoteric behaviour. In theirs as well as in the other authors' studies the problem remains how to determine the concentrations of Si-related defects from the intensities of different LVM peaks. |
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